Italy = ItalieCENCINI, C; VARANI, L.Artificial structures and shorelines. 1988, pp 193-206Book Chapter

Theory of Ballistic Electron Transport in n⁺- i - n⁺ Diodes. Negative Dynamic Resistance in THz-Frequency RangeKOROTYEYEV, V. V; KOCHELAP, V. A; KLIMOV, A. A et al.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 2, pp 169-187, issn 1555-130X, 19 p.Article

Calculation of the intrinsic spectral density of current fluctuations in nanometric Schottky-barrier diodes at terahertz frequenciesMAHI, F. Z; HELMAOUI, A; VARANI, L et al.Physica. B, Condensed matter. 2008, Vol 403, Num 19-20, pp 3765-3768, issn 0921-4526, 4 p.Article

Hydrodynamic simulation of electron transport in n-type Hg_0.8Cd_0.2TeDAOUDI, M; BELGHACHI, A; VARANI, L et al.The European physical journal. B, Condensed matter physics. 2008, Vol 62, Num 1, pp 15-18, issn 1434-6028, 4 p.Article

Hot-carrier thermal conductivity from the simulation of submicron semiconductor structuresGOLINELLI, P; BRUNETTI, R; MARTIN, M. J et al.Semiconductor science and technology. 1997, Vol 12, Num 11, pp 1511-1513, issn 0268-1242Article

Hydrodynamic analysis of DC and AC hot-carrier transport in semiconductorsGRUZHINSKIS, V; STARIKOV, E; SHIKTOROV, P et al.Semiconductor science and technology. 1993, Vol 8, Num 7, pp 1283-1290, issn 0268-1242Article

Noise and correlation functions of hot carriers in semiconductorsREGGIANI, L; KUHN, T; VARANI, L et al.Applied physics. A, Solids and surfaces. 1992, Vol 54, Num 5, pp 411-427, issn 0721-7250Article

Monte Carlo analysis of noise spectra in Schottky-barrier diodesGONZALEZ, T; PARDO, D; VARANI, L et al.Applied physics letters. 1993, Vol 63, Num 22, pp 3040-3042, issn 0003-6951Article

Coupled-Langevin-equation analysis of hot-carrier transport in semiconductorsKUHN, T; REGGIANI, L; VARANI, L et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 4, pp 1903-1906, issn 0163-1829Article

A model current spectral density for hot-carrier noise in semiconductorsKUHN, T; REGGIANI, L; VARANI, L et al.Journal of applied physics. 1991, Vol 69, Num 10, pp 7097-7101, issn 0021-8979, 5 p.Article

Monte Carlo analysis of the behavior and spatial origin of electronic noise in GaAs MESFET'sGONZALEZ, T; PARDO, D; VARANI, L et al.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 5, pp 991-998, issn 0018-9383Article

Current and number fluctuations in submicron n⁺nm⁺ structuresVARANI, L; KUHN, T; REGGIANI, L et al.Solid-state electronics. 1993, Vol 36, Num 2, pp 251-261, issn 0038-1101Article

Correlation functions and quantized noise in mesoscopic systemsKUHN, T; REGGIANI, L; VARANI, L et al.Superlattices and microstructures. 1992, Vol 11, Num 2, pp 205-209, issn 0749-6036Article

Direct Monte Carlo simulation of hot-carrier conductivityREGGIANI, L; VARANI, L; MITIN, V et al.Solid-state electronics. 1989, Vol 32, Num 12, pp 1383-1386, issn 0038-1101Conference Paper

Terahertz wireless communication using GaAs transistors as detectorsTOHME, L; BLIN, S; LAMPIN, J.-F et al.Electronics letters. 2014, Vol 50, Num 4, pp 323-325, issn 0013-5194, 3 p.Article

Terahertz oscillations in ultra-thin n-In_0.53Ga_0.47As ungated channels : Heterostructure Terahertz DevicesMILLITHALER, J.-F; REGGIANI, L; POUSSET, J et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 38, issn 0953-8984, 384210.1-384210.7Article

Low-field mobility spectrum in nonparabolic compound semiconductorsSTARIKOV, E; SHIKTOROV, P; GRUZINSKIS, V et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 46, pp 8267-8273, issn 0953-8984, 7 p.Article

Monte Carlo analysis of the efficiency of tera-hertz harmonic generation in semiconductor nitridesSHIKTOROV, P; STARIKOV, E; GRUZINSKIS, V et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 1, pp 271-279, issn 0031-8965Conference Paper

Electronic noise and impedance field of submicron n⁺nn⁺ InP diode generatorsGRUZINSKIS, V; STARIKOV, E; SHIKTOROV, P et al.Semiconductor science and technology. 1994, Vol 9, Num 10, pp 1843-1848, issn 0268-1242Article

Microscopic analysis of noise and nonlinear dynamics in p-type germaniumKUHN, T; HÜPPER, G; QUADE, W et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 3, pp 1478-1485, issn 0163-1829Article

First-principle calculation of the recombination cross-section assisted by acoustic phonons at shallow impurities in semiconductorsREGGIANI, L; VARANI, L; MITIN, V et al.Il Nuovo cimento. D. 1991, Vol 13, Num 5, pp 647-662, issn 0392-6737, 16 p.Article

Field-dependent conductivity of lightly doped p-Si at 77 KREGGIANI, L; VARANI, L; VAISSIERE, J. C et al.Journal of applied physics. 1989, Vol 66, Num 11, pp 5404-5408, issn 0021-8979Article

I geografi di fronte ai problemi delle coste in La ricerca geografica in Italia 1960-1980CENCINI, C; TORRESANI, S; VARANI, L et al.Convegno. 1980, pp 533-539Conference Proceedings

Terahertz generation in nitrides due to transit-time resonance assisted by optical phonon emission : Heterostructure Terahertz DevicesSTARIKOV, E; SHIKTOROV, P; GRUGINSKIS, V et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 38, issn 0953-8984, 384209.1-384209.12Article

Monte Carlo calculations of hot-electron transport and diffusion noise in GaN and InNSTARIKOV, E; SHIKTOROV, P; GRUZINSKIS, V et al.Semiconductor science and technology. 2005, Vol 20, Num 3, pp 279-285, issn 0268-1242, 7 p.Article